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RP1A090ZP
Data Sheet
10
1
V GS =0V
Pulsed
100
90
80
70
Ta=25°C
Pulsed
10000
1000
t d(off)
60
I D = -9.0A
0.1
Ta=125°C
50
I D = -4.5A
100
t f
Ta=75°C
40
Ta=25°C
0.01
Ta=25°C
Ta=-25°C
30
20
10
t r
t d(on)
V DD = -6V
V GS =-4.5V
10
R G =10 ?
0.001
0
1
Pulsed
0
0.5
1
0
2
4
6
8
10
0.01
0.1
1
10
100
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I D [A]
Fig.12 Switching Characteristics
5
100000
1000
Operation in this area is limited by R DS(ON)
4
10000
C iss
100
(V GS =-4.5V)
P W =100us
P W =1ms
3
1000
10
P W = 10ms
2
1
0
Ta=25°C
V DD = -6V
I D = -9.0A
R G =10 ?
Pulsed
100
10
C oss
C rss
Ta=25°C
f=1MHz
V GS =0V
1
0.1
0.01
DC operation
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0
10
20
30
40
50
60
70
0.01
0.1
1
10
100
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.14 Typical Capacitance
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.15 Maximum Safe Operating Aera
vs. Drain-Source Voltage
10
1
0.1
Ta = 25°C
0.01
0.001
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.16 Normalized Transient Thermal Resistance vs. Pulse Width
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?20 10 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
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